类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 接口IC类型 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||
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![]() | CSD83325LT | Texas Instruments | 数据表 | 21 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 6-XFBGA | 6 | SILICON | 2 | 711 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | yes | 活跃 | 1 (Unlimited) | 6 | 2.3W | BOTTOM | 无铅 | 260 | 未说明 | CSD83325 | Dual | 增强型MOSFET | 205 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 1.25V @ 250μA | 10.9nC @ 4.5V | 353ns | 12V | 589 ns | 8A | 950mV | 10V | METAL-OXIDE SEMICONDUCTOR | Standard | 9.9mOhm | 144 pF | 1.11mm | 2.16mm | 200μm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N06S415AATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | Surface Mount, Wettable Flank | 8-PowerVDFN | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2015 | Automotive, AEC-Q101, OptiMOS™ | yes | 活跃 | 1 (Unlimited) | 8 | 50W | FLAT | 未说明 | not_compliant | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2 N-Channel (Dual) | 15.5m Ω @ 17A, 10V | 4V @ 20μA | 无卤素 | 2260pF @ 25V | 29nC @ 10V | 60V | 20A | 60V | 0.0155Ohm | 90 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UM6J1NTN | ROHM Semiconductor | 数据表 | 6000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 30 ns | 150°C TJ | Tape & Reel (TR) | 2011 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 锡铜 | 150mW | 鸥翼 | 260 | 10 | *J1 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 8 ns | 2 P-Channel (Dual) | SWITCHING | 1.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 30pF @ 10V | 5ns | 30V | 40 ns | 200mA | 20V | 0.2A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UM6K1NTN | ROHM Semiconductor | 数据表 | 56900 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 80 ns | 150°C TJ | Tape & Reel (TR) | 2006 | yes | 不用于新设计 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 13Ohm | 30V | 150mW | 鸥翼 | 260 | 100mA | 10 | *K1 | 6 | 1 | Dual | 增强型MOSFET | 150mW | 15 ns | 2 N-Channel (Dual) | SWITCHING | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | 13pF @ 5V | 35ns | 35 ns | 100mA | 1.5V | 20V | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMG5802LFX-7 | Diodes Incorporated | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-VFDFN Exposed Pad | 6 | SILICON | 32.18 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | 980mW | FLAT | 260 | 40 | 6 | 增强型MOSFET | 980mW | 3.69 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 15m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | 1066.4pF @ 15V | 31.3nC @ 10V | 13.43ns | 24V | 22.45 ns | 6.5A | 12V | 0.015Ohm | 24V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800μm | 5.1mm | 2.1mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4612 | Alpha & Omega Semiconductor Inc. | 数据表 | 21000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 4.5A 3.2A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | 活跃 | 1 (Unlimited) | 2W | 2W | N and P-Channel | 56m Ω @ 4.5A, 10V | 3V @ 250μA | 540pF @ 30V | 10.5nC @ 10V | 60V | 3.2A | 20V | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN4026SSD-13 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SO | 73.992255mg | 7A | 2 | 15.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | 150°C | -55°C | 1.8W | 2 | Dual | 1.8W | 5.3 ns | 1.3W | 2 N-Channel (Dual) | 24mOhm @ 6A, 10V | 3V @ 250μA | 1060pF @ 20V | 19.1nC @ 10V | 7.1ns | 40V | 4.8 ns | 7A | 20V | 1.06nF | 逻辑电平门 | 20mOhm | 24 mΩ | 1.5mm | 4.95mm | 3.95mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6318PZ | ON Semiconductor | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 40 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 780MOhm | Tin (Sn) | -20V | 300mW | 鸥翼 | 260 | -500mA | 30 | Dual | 增强型MOSFET | 300mW | 10 ns | 2 P-Channel (Dual) | SWITCHING | 780m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 85.4pF @ 10V | 1.62nC @ 4.5V | 13ns | 20V | 13 ns | 500mA | 12V | 0.5A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 2mm | 1.25mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN2A04DN8TA | Diodes Incorporated | 数据表 | 722 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 5.9A | 2 | 50.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 25mOhm | Matte Tin (Sn) | 低阈值 | 20V | 2.1W | 鸥翼 | 260 | 6A | 40 | 8 | 2 | 增强型MOSFET | 2.1W | 7.9 ns | 1.8W | 2 N-Channel (Dual) | SWITCHING | 25m Ω @ 5.9A, 4.5V | 700mV @ 250μA (Min) | 1880pF @ 10V | 22.1nC @ 5V | 14.8ns | 30.6 ns | 7.7A | 12V | 5.9A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMS3600AS | ON Semiconductor | 数据表 | 6000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 90mg | SILICON | 38 ns | 15A 30A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 2.5W | 无铅 | 未说明 | not_compliant | 未说明 | R-PDSO-N6 | 2 | 增强型MOSFET | 排水源头 | 13 ns | 2.2W 2.5W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 5.6m Ω @ 15A, 10V | 2.7V @ 250μA | 1770pF @ 13V | 27nC @ 10V | 5.3ns | 25V | 3.9 ns | 30A | 20V | 15A | 0.0056Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 90 pF | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK7K8R7-40EX | Nexperia USA Inc. | 数据表 | 210000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 6 | 53W | 鸥翼 | 未说明 | 未说明 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 53W | 2 N-Channel (Dual) | SWITCHING | 8.5m Ω @ 15A, 10V | 4V @ 1mA | 1439pF @ 25V | 21.8nC @ 10V | 40V | 30A | 225A | 40V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C478NLT1G | ON Semiconductor | 数据表 | 26000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 8-PowerTDFN | 10.5A Ta 29A Tc | -55°C~175°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | 未说明 | 3.1W Ta 23W Tc | 2 N-Channel (Dual) | 14.5m Ω @ 7.5A, 10V | 2.2V @ 20μA | 420pF @ 25V | 8.1nC @ 10V | 40V | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TPS1120DR | Texas Instruments | 数据表 | 30000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 13 ns | -40°C~150°C TJ | Cut Tape (CT) | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | -15V | 840mW | 鸥翼 | 260 | -1.17A | TPS1120 | 8 | 增强型MOSFET | 840mW | 4.5 ns | 2 P-Channel (Dual) | SWITCHING | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 5.45nC @ 10V | 10ns | 10 ns | 1.17A | 2V | 0.4Ohm | 15V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN6A25DN8TA | Diodes Incorporated | 数据表 | 1445 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 3.8A | 2 | 26.2 ns | -55°C~150°C TJ | Cut Tape (CT) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 500mOhm | Matte Tin (Sn) | 60V | 2.1W | 鸥翼 | 260 | 4.7A | 40 | 8 | 2 | 增强型MOSFET | 2.1W | 3.8 ns | 1.8W | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 3.6A, 10V | 1V @ 250μA (Min) | 1063pF @ 30V | 20.4nC @ 10V | 4ns | 10.6 ns | 5A | 20V | 3.6A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMC8097AC | ON Semiconductor | 数据表 | 494324 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 196mg | 2.4A Ta 900mA Tc | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.9W | 260 | 未说明 | Dual | N and P-Channel | 155m Ω @ 2.4A, 10V | 4V @ 250μA | 395pF @ 75V | 6.2nC @ 10V | 150V | N-CHANNEL AND P-CHANNEL | 2.4A | 6.3A | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87351ZQ5D | Texas Instruments | 数据表 | 20000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 2 days ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 12W | 无铅 | 260 | not_compliant | 未说明 | CSD87351 | 2 N-Channel (Dual) Asymmetrical | 2.1V @ 250μA | 1255pF @ 15V | 7.7nC @ 4.5V | 10ns | 30V | 4.2 ns | 32A | 基于半桥的mosfet驱动器 | 逻辑电平门 | 1.5mm | 5mm | 6mm | 1.5mm | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ECH8668-TL-H | ON Semiconductor | 数据表 | 25228 In Stock | - | 最小起订量: 1 最小包装量: 1 | 2 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | SILICON | 7.5A 5A | 2 | 68 ns | 150°C TJ | Tape & Reel (TR) | 2009 | e6 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Bismuth (Sn/Bi) | 1.5W | 8 | Dual | 增强型MOSFET | 1.5W | 17.5 ns | N and P-Channel | SWITCHING | 17m Ω @ 4A, 4.5V | 无卤素 | 1060pF @ 10V | 10.8nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 5A | 10V | 0.017Ohm | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 900μm | 2.9mm | 2.3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSC0910NDIATMA1 | Infineon Technologies | 数据表 | 500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 11A 31A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 1W | 无铅 | 未说明 | not_compliant | 未说明 | R-PDSO-N6 | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 排水源头 | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 4.6m Ω @ 25A, 10V | 2V @ 250μA | 无卤素 | 4500pF @ 12V | 6.6nC @ 4.5V | 25V | 31A | 20V | 11A | 0.0059Ohm | 25V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
QS8J4TR | ROHM Semiconductor | 数据表 | 2950 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | 80 ns | 150°C TJ | Tape & Reel (TR) | 2012 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn/Cu) | 550mW | 260 | 10 | 8 | 2 | 增强型MOSFET | 8 ns | 2 P-Channel (Dual) | SWITCHING | 56m Ω @ 4A, 10V | 2.5V @ 1mA | 800pF @ 10V | 13nC @ 10V | 20ns | 30V | 50 ns | 4A | 20V | 4A | 0.056Ohm | -30V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMCXB900UEZ | Nexperia USA Inc. | 数据表 | 200000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 6-XFDFN Exposed Pad | YES | 6 | SILICON | 600mA 500mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | TrenchFET® | 活跃 | 1 (Unlimited) | 6 | 265mW | DUAL | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N and P-Channel Complementary | SWITCHING | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 21.3pF @ 10V | 0.7nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 500mA | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ITD50N04S4L07ATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 1 Week | 表面贴装 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | YES | PG-TO252-5-311 | 4 | SILICON | Bulk | 活跃 | 50A (Tc) | SMALL OUTLINE, R-PSSO-G4 | 小概要 | Infineon Technologies | PLASTIC/EPOXY | 未说明 | 有 | ITD50N04S4L07ATMA1 | RECTANGULAR | Infineon Technologies AG | 2 | 活跃 | INFINEON TECHNOLOGIES AG | 5.73 | 50 A | -55°C ~ 175°C (TJ) | e3 | EAR99 | Tin (Sn) | SINGLE | 鸥翼 | 未说明 | not_compliant | AEC-Q101 | R-PSSO-G4 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 46W (Tc) | 2 N-Channel (Dual) | 7.2mOhm @ 50A, 10V | 2.2V @ 18μA | 2480pF @ 25V | 33nC @ 10V | 40V | N-CHANNEL | TO-252 | 0.0072 Ω | 200 A | 40 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN10A08DN8TA | Diodes Incorporated | 数据表 | 360000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 1.6A | 1 | 8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 250mOhm | Matte Tin (Sn) | 100V | 1.8W | 鸥翼 | 260 | 2.1A | 40 | 8 | SINGLE WITH BUILT-IN DIODE | 2 | 增强型MOSFET | 1.8W | 3.4 ns | 1.25W | 2 N-Channel (Dual) | SWITCHING | 250m Ω @ 3.2A, 10V | 2V @ 250μA (Min) | 405pF @ 50V | 7.7nC @ 10V | 2.2ns | 2.2 ns | 2.1A | 20V | 100V | 9A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSS84AKV,115 | Nexperia USA Inc. | 数据表 | 12000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 48 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | 逻辑电平兼容 | 500mW | FLAT | 6 | 增强型MOSFET | 330mW | 13 ns | 2 P-Channel (Dual) | SWITCHING | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 36pF @ 25V | 0.35nC @ 5V | 11ns | 50V | 25 ns | 170mA | 20V | -50V | 0.17A | 8.5Ohm | -50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87502Q2T | Texas Instruments | 数据表 | 6472 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | SILICON | 2 | -55°C~150°C TJ | Cut Tape (CT) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | Matte Tin (Sn) | 雪崩 额定 | 2.3W | 无铅 | CSD87502 | Dual | 增强型MOSFET | DRAIN | 2 N-Channel (Dual) | SWITCHING | 32.4m Ω @ 4A, 10V | 2V @ 250μA | 353pF @ 15V | 6nC @ 10V | 30V | 5A | 1.6V | 5A | 23A | 30V | 3.1 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 5V Drive | 29 pF | 2mm | 2mm | 750μm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMC3AMCTA | Diodes Incorporated | 数据表 | 1594 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | SILICON | 2.9A 2.1A | 2 | 11.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 210mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | 1.7W | DUAL | 260 | 40 | 8 | 增强型MOSFET | 2.45W | DRAIN | 1.5 ns | N and P-Channel | SWITCHING | 120m Ω @ 2.5A, 10V | 3V @ 250μA | 190pF @ 25V | 3.9nC @ 10V | 2.8ns | 30V | N-CHANNEL AND P-CHANNEL | 7.5 ns | 2.1A | 20V | 3.7A | -30V | 13A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 780μm | 3.08mm | 2.075mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |
CSD83325LT
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
7.750225
IPG20N06S415AATMA1
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分类:Transistors - FETs, MOSFETs - Arrays
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ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
0.599396
UM6K1NTN
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMG5802LFX-7
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分类:Transistors - FETs, MOSFETs - Arrays
1.974685
AO4612
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分类:Transistors - FETs, MOSFETs - Arrays
DMN4026SSD-13
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分类:Transistors - FETs, MOSFETs - Arrays
2.330327
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ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
19.387019
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
56.412774
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分类:Transistors - FETs, MOSFETs - Arrays
12.048572
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
25.191252
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
PMCXB900UEZ
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
1.953393
ITD50N04S4L07ATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
ZXMN10A08DN8TA
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
8.638856
BSS84AKV,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
CSD87502Q2T
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
12.847069
ZXMC3AMCTA
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
11.073035
